Small-Angle Scattering Image Gallery

2003-11-05

Example of low-angle diffraction

silicon wafer with pattern of photoresist lines 180nm with 1:2 spacing.
Full scale is Q = +/- 0.0025 1/A, E=13keV.
ref: Diego M.Casa

Example USAXS images

Example USAXS image of a tissue engineered sample.
(a) Absorption contrast radiograph at Q=0.
(b) USAXS image at Q=0.0005 1/A from same area as in (a).
ref: Gabrielle Long

Example GISAXS patterns

(a)

(b)

(c)

(d)

(a-d) GISAXS patterns obtained from the sample with x = 0.4:
(a) as-deposited and after RTA at
(b) 800 C/20 s,
(c) 900 C/20 s and
(d) 1000 C/10 s.
(e)

(f)

(g)

(h)

(e-g) GISAXS patterns of the sample with x = 0.8, after annealing at:
(e) 700 C/20 s
(f) 800 C/20 s, and
(g) 1000 C/10 s.
(h) CCD array detector arrangement and scattering directions.
ref: Appl. Phys. Let. 83, 3141 (2003)

Example of the ASAXS effect

The anomalous small angle x-ray scattering effect observed in Tb-loaded Diphosil that had been heated to 1373 K is evidence of Tb-containing nanophases in this material.
ref: J. V. Beitz, Chemistry Division, Argonne National Laboratory, Argonne, IL U. S. A.

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